The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6702900 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 09, 2004

Filed:

Mar. 22, 2001
Applicant:
Inventors:

Su-Yu Yeh, Taipei, TW;

Huai-Tei Yang, Hsin-Chu, TW;

Cheng-Yang Pan, Taipei, TW;

Jun-Yang Lai, Ping-Tung, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 1/600 ; C23F 1/00 ; H01L 2/1306 ;
U.S. Cl.
CPC ...
C23C 1/600 ; C23F 1/00 ; H01L 2/1306 ;
Abstract

A wafer chuck for use in a semiconductor process chamber capable of producing an inert gas blanket positioned on the chuck from residual chemical vapor in the chamber is disclosed. A plurality of mounting pins for supporting a wafer is further provided in the upper surface for forming an inert gas into a cavity formed between the wafer and the upper surface of the chuck. A plurality of apertures in a sidewall of the body portion for flowing an inert gas into the lower chamber forming an inert gas blanket blocking a passageway between the upper and lower chambers, thus preventing the wafer from damage by residual chemical vapor in the lower chamber.


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Yeh, Su-Yu. (2004). Wafer chuck for producing an inert gas blanket and method for using (U.S. Patent No. 6702900). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6702900

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