The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2003
Filed:
Jan. 26, 2001
Tetsuya Ishikawa, Santa Clara, CA (US);
Alexandros T. Demos, San Ramon, CA (US);
Seon-Mee Cho, Santa Clara, CA (US);
Feng Gao, Mountain View, CA (US);
Kaveh F. Niazi, Santa Clara, CA (US);
Michio Aruga, Inba-Gun, JP;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method is provided for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center of the substrate more rapidly than at an edge of the substrate.