The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2003
Filed:
Jun. 18, 2001
Yen-Ming Chen, Hsinchu, TW;
Cheng-Yu Chu, Hsinchu, TW;
Kuo-Wei Lin, Hsinchu, TW;
Chiou-Shian Peng, Hsinchu, TW;
Yang-Tung Fan, Jubei, TW;
Fu-Jier Fan, Jubei, KR;
Shih-Jane Lin, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method of forming a bump structure, comprising the following steps. A structure having an exposed first conductive structure is provided. A first photoresist layer is formed over the structure and the exposed first conductive structure. A second capping photoresist layer is formed over the first photoresist layer. The first and second photoresist layers being comprised of different photoresist materials. The first and second photoresist layers are patterned to form an opening through the first and second photoresist layers and over the first conductive structure. The second capping photoresist layer prevents excessive formation of first photoresist layer residue during processing. A second conductive structure is formed within the opening. The first and second patterned photoresist layers are stripped. The second conductive structure is reflowed to form the bump structure.