The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2003
Filed:
Jul. 16, 2002
Applicant:
Inventors:
Yi-Lung Cheng, Danshuei Jen, TW;
Wen-Kung Cheng, Miao-Li, TW;
Ming-Hwa Yoo, I-Lan, TW;
Szu-An Wu, Hsin-Chu, TW;
Ying-Long Wang, Lung-Jing, TW;
Pei-Fen Chou, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 1/640 ; H05H 1/24 ;
U.S. Cl.
CPC ...
C23C 1/640 ; H05H 1/24 ;
Abstract
A method of removing residual fluorine present in a HDP-CVD chamber which includes a high pressure seasoning process, a dry-cleaning process, and a low-pressure deposition process.
Cheng, Yi-Lung. (2003). Method for removing residual fluorine in hdp-cvd chamber (U.S. Patent No. 6602560). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6602560
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile