The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2003
Filed:
Oct. 15, 2001
Yen-Ming Chen, Hsin-Chu, TW;
Kuo-Wei Lin, Hsin-Chu, TW;
Cheng-Yu Chu, Hsinchu, TW;
Yang-Tung Fan, Jubei, TW;
Fu-Jier Fan, Jubei, TW;
Shih-Jane Lin, Hsinchu, TW;
Chiou-Shian Peng, Hsinchu, TW;
Hsien-Tsung Liu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Abstract
A method of forming a bump overlying the copper based contact pad to prevent oxidation of the copper based contact pad. A passivation blanket is deposited over a semiconductor device having a copper based contact pad, the passivation blanket includes a first layer overlying the top surface; a second layer overlying the first layer; a portion of the second layer overlying the copper based contact pad is removed leaving the first layer in place; depositing an under bump metallurgy over the semiconductor device, a portion of the first layer overlying the copper based contact pad is removed so that the copper based contact pad has limited exposure to oxygen; depositing an under bump metallurgy over the semiconductor device; removing excess under bump metallurgy; depositing an electrically conductive material over the under bump metallurgy; reflowing electrically conductive material to form a bump overlying the copper based contact pad.