The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2002
Filed:
Jan. 08, 1998
Shiro Yamasaki, Aichi-ken, JP;
Seiji Nagai, Acihi-ken, JP;
Masayoshi Koike, Aichi-ken, JP;
Isamu Akasaki, Nagoya-shi, Aichi-ken, 451, JP;
Hiroshi Amano, Aichi-ken, 465, JP;
Isao Yamada, Himeji-shi, Hyogo-ken, 670, JP;
Jiro Matsuo, Kyoto-shi, Kyoto-fu, 612, JP;
Other;
Abstract
A method for manufacturing a laser diode using Group III nitride compound semiconductor comprising a buffer layer , an n layer , a cladding layer , an active layer , a p-type cladding layer , a contact layer , an SiO layer , an electrode which is formed on the window formed in a portion of the SiO layer , and an electrode which is formed on a portion of the n layer by etching a portion of layers from the contact layer down to the cladding layer . One pair of opposite facets S of a cavity is formed by RIBE, and then the facets are etched by gas cluster ion beam etching using Ar gas. As a result, the facets S are flatted and the mirror reflection of the facets S is improved.