The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2002
Filed:
Aug. 10, 2000
Applicant:
Inventors:
Mei Sheng Zhou, Singapore, SG;
John Leonard Sudijono, Singapore, SG;
Subhash Gupta, Singapore, SG;
Sudipto Ranendra Roy, Singapore, SG;
Paul Kwok Keung Ho, Singapore, SG;
Yi Xu, Singapore, SG;
Simon Chooi, Singapore, SG;
Yakub Aliyu, Singapore, SG;
Assignee:
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/158 ;
U.S. Cl.
CPC ...
H01L 2/158 ;
Abstract
A new method of forming a dual damascene interconnect structure, wherein damage of interconnect and contamination of dielectrics during etching is minimized by having an embedded organic stop layer over the lower interconnect and later etching the organic stop layer with an H2 containing plasma, or hydrogen radical.