The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2002
Filed:
Dec. 14, 2000
Toshiaki Motonaga, Tokyo-to, JP;
Toshifumi Yokoyama, Tokyo-to, JP;
Takafumi Okamura, Tokyo-to, JP;
Yoshinori Kinase, Tokyo-to, JP;
Hiroshi Mohri, Tokyo-to, JP;
Junji Fujikawa, Tokyo-to, JP;
Hiro-o Nakagawa, Tokyo-to, JP;
Shigeki Sumida, Tokyo-to, JP;
Satoshi Yusa, Tokyo-to, JP;
Masashi Ohtsuki, Tokyo-to, JP;
Dai Nippon Printing Co., Ltd., Tokyo-To, JP;
Abstract
A blank for a halftone phase shift photomask in the present invention comprises a transparent substrate and a halftone phase shift film provided thereon, and said halftone phase shift film has a multilayer construction in which at least a first layer capable of being etched with a chlorinated gas and a second layer capable of being etched with a fluorinated gas are disposed in this order from the side near said transparent substrate. A film made of tantalum silicides is suitable to use as the second layer of the halftone phase shift film. When such a blank is first etched with a fluorinated gas and then etched with chlorinated gas, because an etching selective ratio to a transparent substrate made of synthetic quartz and the like can be taken sufficiently while maintaining the applicability to the exposure light with a short wavelength that is characteristic of silicide materials in addition to good chemical stability and good processing properties that are characteristic of tantalum materials, patterning in high precision will be made possible. As a result, it is possible to obtain an ideal halftone phase shift photomask excellent in stability after mask processing and in the applicability to the short wavelength.