The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2002
Filed:
Apr. 17, 2001
Applicant:
Inventors:
Sing-Pin Tay, Fremont, CA (US);
Yao Zhi Hu, San Jose, CA (US);
Sagy Levy, Sunnyvale, CA (US);
Jeffrey Gelpey, Peabody, MA (US);
Assignee:
Mattson Technology, Inc., Fremont, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/131 ;
Abstract
The oxynitride or oxide layer formed on a semiconductor substrate is pre-treated with UV-excited gas (such as chlorine or nitrogen) to improve the layer surface condition and increase the density of nucleation sites for subsequent silicon nitride deposition. The pre-treatment is shown to reduce the root mean square surface roughness of thinner silicon nitride films (with physical thicknesses below 36 Å, or even below 20 Å that are deposited on the oxynitride layer by chemical vapor deposition (CVD).
Published as:
WO0180298A1; US6451713B1; EP1275139A1; KR20030009436A; CN1423834A; JP2003531490A; KR100727698B1; CN1331199C; EP1275139B1; ATE518239T1; JP4813737B2;