The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2002
Filed:
Apr. 10, 2000
David Guang-Kai Jeng, Hsinchu, TW;
Hong-Ji Lee, Hsinchu, TW;
Fred Yingyi Chen, Hsinchu, TW;
Ching-An Chen, Hsinchu, TW;
Tsung-Nane Kuo, Hsinchu, TW;
Jui-Hung Yeh, Hsinchu, TW;
Nano-Architect Research Corporation, Hsinchu, TW;
Abstract
A method and a reactor of plasma treating a wafer with high induction plasma density and high uniformity of reactive species were disclosed in this invention. The inductively coupled plasma reactor of the present invention includes a vacuum chamber having a dielectric ceiling thereof and a unique coil configuration atop on the dielectric ceiling, wherein the dielectric ceiling is designed to have a different height according to its shape, e.g., a planar, dish-shaped or hat-shaped dielectric ceiling, for coupling an RF power into the chamber to excite the plasma. The unique coil configuration contains plural helical coils which are arranged in series or in parallel to provide a high-density uniform ion plasma for a large wafer treatment.