Hsinchu, Taiwan

David Guang-Kai Jeng

This inventor holds 3 USPTO granted patents. Top assignee: Nano-Architect Research Corporation. Active years: 2001-2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: David Guang-Kai Jeng. Retrieved from https://idiyas.com/inventor/david-guang-kai-jeng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.3

ph-index = 3

Forward Citations = 83(Granted Patents)


Company Filing History:


Years Active: 2001-2002

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3 patents (USPTO):Explore Patents

Title: Innovations of David Guang-Kai Jeng

Introduction

David Guang-Kai Jeng is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of plasma processing technology, holding a total of 3 patents. His work focuses on enhancing the efficiency and uniformity of plasma treatment for wafers, which is crucial in various manufacturing processes.

Latest Patents

One of his latest patents is for an induction plasma processing chamber. This invention discloses a method and apparatus for plasma treating a wafer with low capacitive coupling, high induction power density, and high uniformity of reactive species. The first embodiment manages a multiturn helical coil to match with an impedance at an RF drive frequency, effectively reducing capacitive coupling. The second embodiment employs a can-like dielectric to prompt plasma species to approach the wafer surface at low pressure, resulting in higher plasma density and etch rates. The third embodiment utilizes a cap-like dielectric to elevate the ceiling above the wafer, thereby improving plasma generation uniformity within the chamber.

Another significant patent by Jeng is a method and apparatus for generating high-density uniform plasma. This invention includes a reactor designed for plasma treating a wafer with high induction plasma density and uniformity of reactive species. The inductively coupled plasma reactor features a vacuum chamber with a dielectric ceiling and a unique coil configuration atop it. The dielectric ceiling is designed with varying heights based on its shape, such as planar, dish-shaped, or hat-shaped, to effectively couple RF power into the chamber and excite the plasma. The unique coil configuration consists of multiple helical coils arranged in series or parallel, providing a high-density uniform ion plasma for large wafer treatments.

Career Highlights

David Guang-Kai Jeng is currently associated with Nano-Architect Research Corporation, where he continues to innovate in the field of plasma technology. His work has been instrumental in advancing the capabilities of plasma processing, which is vital for various applications in semiconductor manufacturing.

Collaborations

Throughout his career, Jeng has collaborated with notable colleagues, including Hong-Ji Lee and Fred Yingyi Chen. These collaborations have contributed to the development of cutting-edge technologies in plasma treatment.

Conclusion

David Guang-Kai Jeng's contributions to plasma processing technology have established him as a prominent inventor in his field. His innovative patents reflect his commitment to enhancing manufacturing processes through advanced

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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