The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2002
Filed:
Jul. 19, 2000
John Sudijono, Singapore, SG;
Yakub Aliyu, Singapore, SG;
Mei Sheng Zhou, Singapore, SG;
Simon Chooi, Singapore, SG;
Subhash Gupta, Singapore, SG;
Sudipto Ranendra Roy, Singapore, SG;
Paul Kwok Keung Ho, Singapore, SG;
Yi Xu, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
A method of preventing metal penetration and diffusion from metal structures formed over a semiconductor structure, comprising the following steps. A semiconductor structure including a patterned dielectric layer is provided. The patterned dielectric layer includes an opening and an upper surface. The dielectric layer surface is then passivated to form a passivation layer. A metal plug is formed within the dielectric layer opening. The passivation layer prevents penetration and diffusion of metal out from the metal plug into the semiconductor structure and the patterned dielectric layer.