The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2002
Filed:
Jul. 13, 2000
John Sudijono, Singapore, SG;
Yakub Aliyu, Singapore, SG;
Mei Sheng Zhou, Singapore, SG;
Simon Chooi, Singapore, SG;
Subhash Gupta, Singapore, SG;
Sudipto Roy, Singapore, SG;
Paul Ho, Singapore, SG;
Yi Xu, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
A method of forming a metal plug, comprising the following steps. An etched dielectric layer, over a conductive layer, over a semiconductor structure are provided. The etched dielectric layer having a via hole and an exposed periphery. The etched dielectric layer is treated with at least one alkaline earth element source to form an in-situ metal barrier layer within the dielectric layer exposed periphery. A metal plug is formed within the via hole wherein the in-situ metal barrier layer prevents diffusion of the metal from the metal plug into the dielectric oxide layer.