The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2002
Filed:
Jun. 07, 1999
Nobuo Matsuki, Tama, JP;
Yuichi Naito, Tama, JP;
Yoshinori Morisada, Tama, JP;
Aya Matsunoshita, Tama, JP;
ASM Japan K.K., Tokyo, JP;
Abstract
A method for forming a silicone polymer insulation film having a low dielectric constant, high thermal stability, high humidity-resistance, and high O plasma resistance on a semiconductor substrate is applied to a plasma CVD apparatus. The first step is introducing a silicon-containing hydrocarbon compound expressed by the general formula Si O (R) (OC H ) (&agr;, &bgr;, x, and y are integers) and then introducing the vaporized compound to the reaction chamber of the plasma CVD apparatus. The residence time of the material gas is lengthened by, for example, reducing the total flow of the reaction gas, in such a way as to form a silicone polymer film having a micropore porous structure with a low dielectric constant.