The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
Oct. 18, 2000
Applicant:
Inventor:
Nobuo Matsuki, Tama, JP;
Assignee:
ASM Japan K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/131 ;
Abstract
In a method for forming in a reactor a film having a low relative dielectric constant on a semiconductor substrate by plasma reaction, the improvement can be achieved by lengthening a residence time, Rt, of a reaction gas in the reactor, wherein 100 msec≦Rt. The film includes insulation films and mask films.
Published as: