The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2002
Filed:
Jul. 18, 2000
Mei Sheng Zhou, Singapore, SG;
John Sudijono, Singapore, SG;
Subhash Gupta, Singapore, SG;
Sudipto Roy, Singapore, SG;
Paul Ho, Singapore, SG;
Xu Yi, Singapore, SG;
Simon Chooi, Singapore, SG;
Yakub Aliyu, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singaporae, SG;
Abstract
A new method to avoid post-etch cleaning in a metallization process is described. An insulating layer is formed over a first metal line in a dielectric layer overlying a semiconductor substrate. A via opening is etched through the insulating layer to the first metal line whereby a polymer forms on sidewalls of the via opening. The polymer is treated with a fluorinating agent whereby the polymer is converted to an inert layer. Thereafter, a second metal line is formed within the via opening wherein the inert layer acts is as a barrier layer to complete the metallization process in the fabrication of an integrated circuit device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile