The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 22, 2002

Filed:

Dec. 30, 1999
Applicant:
Inventors:

Thomas F. Curran, Jr., Milton, VT (US);

Timothy C. Krywanczyk, Essex Junction, VT (US);

Michael S. Lube, Richmond, VT (US);

Matthew D. Moon, Jeffersonville, VT (US);

Rock Nadeau, Jericho, VT (US);

Clark D. Reynolds, Colchester, VT (US);

Dean A. Schaffer, Essex Junction, VT (US);

Joel M. Sharrow, South Hero, VT (US);

Paul H. Smith, Jr., Essex Junction, VT (US);

David C. Thomas, Richmond, VT (US);

Eric J. White, Charlotte, VT (US);

Kenneth H. Yao, Essex Junction, VT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract

A method of reworking copper metallurgy on semiconductor devices which includes selective removal of insulator, selective removal of copper, non-selective removal of copper and insulator followed by the redeposition of an insulating copper barrier layer and at least one metallurgical interconnect layer.


Find Patent Forward Citations

Curran, Jr., Thomas. (2002). Method for reworking copper metallurgy in semiconductor devices (U.S. Patent No. 6340601). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6340601

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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