The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2002
Filed:
Jul. 12, 1999
Laizhong Luo, Fremont, CA (US);
Ying Holden, San Jose, CA (US);
Rene George, San Jose, CA (US);
Robert Guerra, Fremont, CA (US);
Allan Wiesnoski, Pleasanton, CA (US);
Nicole Kuhl, Sunnyvale, CA (US);
Craig Ranft, Fremont, CA (US);
Sai Mantripragada, Sunnyvale, CA (US);
Mattson Technology, Inc., Fremont, CA (US);
Abstract
A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.