The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2001
Filed:
Mar. 20, 1995
Michio Sato, Yokohama, JP;
Takashi Yamanobe, Yamato, JP;
Tohru Komatsu, Yokosuka, JP;
Yoshiharu Fukasawa, Yokohama, JP;
Noriaki Yagi, Yokohama, JP;
Toshihiro Maki, Yokohama, JP;
Hiromi Shizu, Fujisawa, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A refractory metal silicide target is characterized by comprising a fine mixed structure composed of MSi,(where M: refractory metal) grains and Si grains, wherein the number of MSi,grains independently existing in a cross section of 0.01 mm,of the mixed structure is not greater than 15, the MSi,grains have an average grain size not greater than 10 &mgr;m, whereas free Si grains existing in gaps of the MSi,grains have a maximum grain size not greater than 20 &mgr;m. The target has a high density, high purity fine mixed structure with a uniform composition and contains a small amount of impurities such as oxygen etc. The employment of the target can reduce particles produced in sputtering, the change of a film resistance in a wafer and the impurities in a film and improve yield and reliability when semiconductors are manufactured.