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For the Inventor, By the Inventor

Yokohama, Japan

Takashi Yamanobe

This inventor holds 13 USPTO granted patents. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1989-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takashi Yamanobe. Retrieved from https://idiyas.com/inventor/takashi-yamanobe

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 13

% Patents Active = 92.3

Average Co-Inventor Count = 5.7

ph-index = 9

Forward Citations = 171(Granted Patents)


Location History:

  • Kanagawa, JP (1995)
  • Machida, JP (2000)
  • Yamato, JP (2001 - 2002)
  • Yokohama, JP (1989 - 2011)

Company Filing History:

goldMedal13 out of 53,250 
 
Kabushiki Kaisha Toshiba
 patents

Years Active: 1989-2011

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13 patents (USPTO):Explore Patents
1. 7988786 - Carbon film coated member (2011-08-02),
2. 6352628 - Refractory metal silicide target, method of manufacturing the target, refractory metal silicide thin film, and semiconductor device (2002-03-05),
3. 6309593 - Refractory metal silicide target, method of manufacturing the target, refractory metal silicide thin film, and semiconductor device (2001-10-30),
4. 6165607 - Sputtering target and antiferromagnetic film and magneto-resistance (2000-12-26),
5. 5733427 - Sputtering target and method of manufacturing the same (1998-03-31),
6. 5679983 - Highly purified metal material and sputtering target using the same (1997-10-21),
7. 5470527 - Ti-W sputtering target and method for manufacturing same (1995-11-28),
8. 5458697 - Highly purified metal material and sputtering target using the same (1995-10-17),
9. 5447616 - Sputtering target (1995-09-05),
10. 5418071 - Sputtering target and method of manufacturing the same (1995-05-23),
11. 5294321 - Sputtering target (1994-03-15),
12. 5196916 - Highly purified metal material and sputtering target using the same (1993-03-23),
13. 4842706 - Sputtering target (1989-06-27),

Title: Takashi Yamanobe: Innovator in Semiconductor Technology

Introduction

Takashi Yamanobe is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. His work focuses on enhancing the performance and reliability of semiconductor equipment.

Latest Patents

One of Yamanobe's latest patents is for a carbon film coated member. This invention provides a carbon film coated member that includes a base material and a coated film formed on at least part of the surface of the base material. The coated film consists of a matrix composed of amorphous carbon and at least one of metal and metal carbide. The atomic ratio of the metal to carbon in the coated film is maintained between 0.01 to 0.7. This structure offers excellent low-friction properties, wear resistance, and durability, making it suitable for use in semiconductor equipment under severe operating conditions. Another notable patent involves a refractory metal silicide target, which is characterized by a fine mixed structure of MSi grains and Si grains. This target is designed to reduce particles produced during sputtering and improve yield and reliability in semiconductor manufacturing.

Career Highlights

Yamanobe is currently associated with Toshiba Corporation, where he continues to innovate in semiconductor technologies. His work has been instrumental in advancing the efficiency and effectiveness of semiconductor devices.

Collaborations

Throughout his career, Yamanobe has collaborated with notable colleagues, including Michio Satou and Toshihiro Maki. These collaborations have contributed to the development of cutting-edge technologies in the semiconductor industry.

Conclusion

Takashi Yamanobe's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence the development of reliable and efficient semiconductor equipment.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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