The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 1995
Filed:
Feb. 04, 1993
Michio Satou, Kanagawa, JP;
Takashi Yamanobe, Kanagawa, JP;
Takashi Ishigami, Kanagawa, JP;
Mituo Kawai, Kanagawa, JP;
Noriaki Yagi, Kanagawa, JP;
Toshihiro Maki, Kanagawa, JP;
Minoru Obata, Tokyo, JP;
Shigeru Ando, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Kanagawa, JP;
Abstract
In the present invention, metal silicide grains form an interlinked structure of a metal silicide phase, and Si grains which form a Si phase are discontinuously dispersed between the metal silicide phase to provide a sputtering target having a high density two-phased structure and having an aluminum content of 1 ppm or less. Because of the high density and high strength of the target, the generation of particles from the target during sputtering is reduced, and due to the reduced carbon content of the target, the mixing of carbon into the thin film during sputtering can be prevented.