Yoshiharu Fukasawa

Title: The Innovative Mind of Yoshiharu Fukasawa

Introduction

Yoshiharu Fukasawa, an accomplished inventor based in Yokohama, Japan, has made significant contributions to the field of materials science, particularly in the development of innovative materials for wiring applications. With a remarkable portfolio of 11 patents, Fukasawa's work is characterized by its focus on enhancing the performance and reliability of semiconductor devices.

Latest Patents

Fukasawa's latest patents showcase his expertise in material composition and manufacturing methods. One of his notable inventions is the Mo-W material for the formation of wirings, which consists of 20 to 95% tungsten, with the remainder being molybdenum and inevitable impurities. This innovative material is created through powder metallurgy techniques or smelting techniques, resulting in a product that offers low resistance, excellent workability, and high tolerance for etchants. The Mo-W alloy is specifically designed for use as address wirings in liquid crystal display devices.

Additionally, he has developed the Mo-W target for the production of wirings, which enables the creation of Mo-W wiring thin films with high repeatability. Another significant patent involves a refractory metal silicide target characterized by a fine mixed structure composed of refractory metal silicide (MSi) and silicon (Si) grains. This target greatly reduces particle production during sputtering processes and improves the yield and reliability of semiconductor manufacturing.

Career Highlights

Yoshiharu Fukasawa has gained valuable experience working with prestigious companies such as Toshiba Corporation and Tokyo Shibaura Denki Corporation. His expertise in material science has allowed him to play a pivotal role in the development of innovative solutions that enhance the performance of semiconductor devices.

Collaborations

Throughout his career, Fukasawa has collaborated with notable colleagues, including Michio Sato and Toshihiro Maki. These collaborations have fostered an environment of innovation, pushing the boundaries of material technology and paving the way for advancements in semiconductor devices.

Conclusion

In summary, Yoshiharu Fukasawa stands out as a key figure in the realm of materials innovation, particularly in the development of Mo-W materials and refractory metal silicides. His extensive patent portfolio and contributions to the field continue to influence the design and manufacturing of advanced electronic devices, solidifying his status as a pioneering inventor in materials science.