The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2001
Filed:
Sep. 29, 2000
Jyu-Horng Shieh, Hsin-Chu, TW;
Jen-Cheng Liu, Chia-Yi, TW;
Chao-Cheng Chen, Matou, TW;
Li-Chi Chao, Yang-mei, TW;
Chia-Shia Tsai, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd, Hsin Chu, TW;
Abstract
Within a method for etching a trench within a silicon oxide layer there is first provided a substrate. There is then formed over the substrate a silicon oxide layer. There is then formed over the silicon oxide layer a masking layer. There is then etched, while employing a plasma etch method in conjunction with the masking layer as an etch mask layer, the silicon oxide layer to form an etched silicon oxide layer defining a trench. Within the method, the plasma etch method employs an etchant gas composition comprising: (1) octafluorocyclobutane; and (2) at least one of carbon tetrafluoride, difluoromethane, hexafluoroethane and oxygen; but excluding (3) a carbon and oxygen containing gas.