The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Mar. 05, 1999
Gerald Zheyao Yin, Cupertino, CA (US);
Chii Guang Lee, Fremont, CA (US);
Arnold Kholodenko, San Francisco, CA (US);
Peter K. Loewenhardt, San Jose, CA (US);
Hongching Shan, San Jose, CA (US);
Diana Xiaobing Ma, Saratoga, CA (US);
Dan Katz, Agoura Hills, CA (US);
Applied Materials Inc., Santa Clara, CA (US);
Abstract
A helicon wave, high density RF plasma reactor having improved plasma and contaminant control. The reactor contains a well defined anode electrode that is heated above a polymer condensation temperature to ensure that deposits of material that would otherwise alter the ground plane characteristics do not form on the anode. The reactor also contains a magnetic bucket for axially confining the plasma in the chamber using a plurality of vertically oriented magnetic strips or horizontally oriented magnetic toroids that circumscribe the chamber. The reactor may utilize a temperature control system to maintain a constant temperature on the surface of the chamber.