The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2000
Filed:
Dec. 31, 1997
Ebrahim Andideh, Portland, OR (US);
Lawrence Brigham, Beaverton, OR (US);
Robert S Chau, Beaverton, OR (US);
Tahir Ghani, Beaverton, OR (US);
Chia-Hong Jan, Portland, OR (US);
Justin Sandford, Tualatin, OR (US);
Mitchell C Taylor, Lake Oswego, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A method of forming a MOS transistor. According to the method of the present invention, a pair of source/drain contact regions are formed on opposite sides of a gate electrode. After forming the pair of source/drain contact regions, semiconductor material is deposited onto opposite sides of the gate electrode. Dopants are then diffused from the semiconductor material into the substrate beneath the gate electrode to form a pair of source/drain extensions.