The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2000
Filed:
Jun. 10, 1998
Masayuki Tomoyasu, Nirasaki, JP;
Akira Koshiishi, Kofu, JP;
Kosuke Imafuku, Kofu, JP;
Shosuke Endo, Kofu, JP;
Kazuhiro Tahara, Nirasaki, JP;
Yukio Naito, Kofu, JP;
Kazuya Nagaseki, Yamanashi-ken, JP;
Keizo Hirose, Kofu, JP;
Mitsuaki Komino, Tokyo, JP;
Hiroto Takenaka, Tokyo, JP;
Hiroshi Nishikawa, Tokyo, JP;
Yoshio Sakamoto, Tokyo, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f.sub.1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f.sub.2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.