The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2000
Filed:
Jul. 01, 1998
Jiong-Ping Lu, Dallas, TX (US);
Ming Hwang, Dallas, TX (US);
Dick N Anderson, Plano, TX (US);
Duane E Carter, Plano, TX (US);
Wei-Yung Hsu, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A metal-poly stack gate structure and associated method for forming a conductive barrier layer between W and poly in the metal-gate stack gate structure. The process includes the steps of depositing doped silicon on a substrate; forming nitride on the deposited silicon; depositing a metal on the nitride to form a metal/nitride/deposited silicon stack; and thermally treating the stack to transform the nitride into a conductive barrier layer between the metal and the deposited silicon. The thermal treatment transforms the nitride layer (SiN.sub.x or SiN.sub.x O.sub.y) into a conductive barrier (WSi.sub.x N.sub.y or WSi.sub.x N.sub.y O.sub.z) to form a W/barrier/poly stack gate structure. The barrier layer blocks reaction between W and Si, enhances sheet resistance, enhances adhesion between the W and the poly, and is stable at high temperatures.