The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1999
Filed:
Sep. 20, 1996
Marc-A Nicolet, Pasadena, CA (US);
Roland Madar, Eybens, FR;
Claude Bernard, Brie et Angonnes, FR;
James G Fleming, Albuquerque, NM (US);
Elizabeth Lynn Roherty-Osmun, Albuquerque, NM (US);
Paul M Smith, Albuquerque, NM (US);
Jonathan S Custer, Albuquerque, NM (US);
Ronald V Jones, Albuquerque, NM (US);
California Institute of Technology, Pasadena, CA (US);
Sandia Corporation, Albuquerque, NM (US);
Abstract
The present invention relates to the forming of amorphous or near-amorphous, ternary films of W-Si-N on substrates by chemical vapor deposition of WF.sub.6, SiH.sub.4 and NH.sub.3 and a carrier gas. The present invention method will allow the conformal forming of amorphous or near-amorphous, ternary films of W-Si-N on patterned non-planar substrates at temperatures at or below about 450.degree. C., by chemical vapor deposition of WF.sub.6, SiH.sub.4 and NH.sub.3 and a carrier gas. A typical temperature range for the formation of the films is between 473.degree. K. and 773.degree. K., while the reactor pressure can be varied between 0.1 to 50 Torr. The composition of the deposited films is adjusted by varying the flow ratios of the reactive gases.