Company Filing History:
2 out of 1,765 
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Years Active: 1999
Title: Innovations of Elizabeth Lynn Roherty-Osmun
Introduction
Elizabeth Lynn Roherty-Osmun is a notable inventor based in Albuquerque, NM (US). She has made significant contributions to the field of chemical vapor deposition, particularly in the synthesis of tungsten-silicon-nitrogen (W-Si-N) films. With a total of 2 patents, her work has implications for various technological applications.
Latest Patents
One of her latest patents is focused on the synthesis of W-Si-N films by chemical vapor deposition using WF.sub.6. This invention relates to the formation of amorphous or near-amorphous, ternary films of W-Si-N on substrates. The method allows for conformal forming of these films on patterned non-planar substrates at temperatures at or below about 450°C. The typical temperature range for the formation of the films is between 473 K and 773 K, with reactor pressure varying between 0.1 to 50 Torr. The composition of the deposited films can be adjusted by varying the flow ratios of the reactive gases. Another patent involves the chemical vapor deposition of W-Si-N and W-B-N, which describes a method of depositing a ternary, refractory-based thin film on a substrate using precursor sources of tungsten, silicon, or boron, and nitrogen.
Career Highlights
Elizabeth has worked with prominent organizations such as Sandia Corporation and the California Institute of Technology. Her experience in these institutions has allowed her to develop her expertise in chemical vapor deposition and thin film technology.
Collaborations
Throughout her career, Elizabeth has collaborated with notable colleagues, including James G Fleming and Paul M Smith. These collaborations have contributed to her innovative work and advancements in her field.
Conclusion
Elizabeth Lynn Roherty-Osmun is a pioneering inventor whose work in chemical vapor deposition has led to significant advancements in the synthesis of W-Si-N films. Her contributions continue to influence the field and inspire future innovations.