The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 1999
Filed:
May. 27, 1997
Applicant:
Inventors:
Shigeru Mizuno, Kawasaki, JP;
Manabu Tagami, Fuchu, JP;
Shinya Hasegawa, Fuchu, JP;
Yoichiro Numasawa, Machida, JP;
Masahito Ishihara, Fuchu, JP;
Kiyoshi Nashimoto, Hachiouji, JP;
Nobuyuki Takahashi, Sagamihara, JP;
Assignee:
Anelva Corporation, Fuchu, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438680 ; 438683 ; 438685 ; 427255 ; 4272551 ; 4272552 ; 4272557 ;
Abstract
A method of depositing a thin film on a substrate by plasma-enhanced CVD is provided. The method includes introducing H.sub.2 or H.sub.2 and N.sub.2 into a plasma-enhanced CVD reactor; generating a plasma in the reactor; introducing a reaction gas comprising TiCl.sub.4, silane, and either H.sub.2 or H.sub.2 and N.sub.2 into the reactor; and depositing a Ti film or a TiN film containing Si on a substrate in the reactor.