The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 1998
Filed:
Mar. 29, 1996
Masayuki Kojima, Kokubunji, JP;
Yoshikazu Ito, Yamanashi-ken, JP;
Kazushi Tomita, Kawaguchi, JP;
Shigeki Tozawa, Nirasaki, JP;
Shunichi Iimuro, Yamanashi-ken, JP;
Masashi Arasawa, Enzan, JP;
Eiichi Nishimura, Yamanashi-ken, JP;
Hitachi, Ltd., Tokyo, JP;
Tokyo Electron Limited, Tokyo, JP;
Tokyo Electron Yamanashi Limited, Nirasaki, JP;
Abstract
A parallel-plate plasma etching apparatus includes a susceptor electrode and a shower electrode which are arranged in a process chamber. A semiconductor wafer is placed on the susceptor electrode. A shower region defined by a plurality of process gas supply holes is formed in the shower electrode. The shower electrode is cooled by a cooling block and causes an effective electrode portion of the shower electrode to have a temperature gradient such that a temperature at the central portion of the effective electrode portion is lower than a temperature at the peripheral portion of the effective electrode portion. The diameter of the shower region is selected to be smaller than the diameter of the wafer by 5 to 25% such that degradation of planar uniformity of a degree of etching anisotropy on the wafer caused by the temperature gradient of the effective electrode portion is compensated for. The diameter of the effective electrode portion is selected to be larger than the size of a wafer by 5 to 35% such that a taper angle of a side wall to be etched formed by etching is set to be 85.degree. to 90.degree..