The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 1989
Filed:
Jul. 15, 1987
Hiroyuki Sakai, Kumamoto, JP;
Kazutoshi Yoshioka, Kumamoto, JP;
Kimiharu Matsumura, Kumamoto, JP;
Keisuke Shigaki, Kumamoto, JP;
Yutaka Amemiya, Yamanashi, JP;
Shunichi Iimuro, Yamanashi, JP;
Haruhiko Yoshioka, Yamanashi, JP;
Teruhiko Onoe, Kofu, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method and an apparatus, both for ashing unnecessary layers such as a photoresist layer, formed on a semiconductor wafer, by applying ozone to the layer, are disclosed. An ashing gas containing oxygen atom radical, or containing oxygen gas and an ashing-promoting gas, is applied to the layer, thereby ashing the layer readily and efficiently. The surface temperature of the layer is set at a prescribed value, and the ashing gas is applied uniformly onto the entire surface of the layer, or onto a part thereof, thus ashing the whole layer, or a part thereof, uniformly at a high rate, and the end-point of the ashing process is detected, thereby to enhance the efficiency of the ashing process.