Kofu, Japan

Teruhiko Onoe


Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 413(Granted Patents)


Company Filing History:


Years Active: 1989

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1 patent (USPTO):Explore Patents

Title: Teruhiko Onoe: Innovator in Semiconductor Processing

Introduction

Teruhiko Onoe is a notable inventor based in Kofu, Japan. He has made significant contributions to the field of semiconductor processing, particularly through his innovative methods and apparatuses.

Latest Patents

Onoe holds a patent for a "Method of ashing layers, and apparatus for ashing layers." This invention involves a method and apparatus designed for ashing unnecessary layers, such as photoresist layers, formed on semiconductor wafers. The process utilizes ozone to effectively ash the layers. An ashing gas containing oxygen atom radicals, or a combination of oxygen gas and an ashing-promoting gas, is applied to the layer. This method allows for efficient ashing by maintaining a prescribed surface temperature and applying the ashing gas uniformly, enhancing the overall efficiency of the ashing process.

Career Highlights

Onoe is associated with Tokyo Electron Limited, a leading company in the semiconductor industry. His work has contributed to advancements in semiconductor manufacturing processes, making them more efficient and effective.

Collaborations

Some of his notable coworkers include Hiroyuki Sakai and Kazutoshi Yoshioka, who have collaborated with him on various projects within the company.

Conclusion

Teruhiko Onoe's innovative contributions to semiconductor processing through his patented methods demonstrate his significant impact on the industry. His work continues to influence advancements in technology and manufacturing processes.

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