The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 1988
Filed:
Dec. 30, 1986
Applicant:
Inventors:
Mitsuo Matsumura, Kasukabe, JP;
Hideo Yamamoto, Ohi, JP;
Keitaro Fukui, Ohi, JP;
Toshihiro Yoshida, Ohi, JP;
Yoshinobu Okayasu, Ohi, JP;
Kunio Asai, Ohi, JP;
Osamu Nakamura, Tokyo, JP;
Assignee:
Toa Nenryo Kogyo K.K., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437-4 ; 437101 ; 437110 ; 136258 ; 427 39 ; 357 30 ; 118719 ; 118723 ;
Abstract
This invention discloses a new semiconductor device having no step type p-i-n juctions but rather has a graded p-i-n juction. The semiconductor device shows a high photoelectric conversion efficiency, and since said device can be produced easily with good reproducibility by a plasma discharge method, it is especially suited for use as a solar battery. An apparatus for the production of said semiconductor device is also disclosed.