Ohi, Japan

Toshihiro Yoshida


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 12(Granted Patents)


Company Filing History:


Years Active: 1988

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1 patent (USPTO):Explore Patents

Title: Toshihiro Yoshida: Innovator in Semiconductor Technology

Introduction

Toshihiro Yoshida is a prominent inventor based in Ohi, Japan. He is known for his significant contributions to the field of semiconductor technology. His innovative work has led to advancements that enhance the efficiency of solar energy conversion.

Latest Patents

Yoshida holds a patent for a "Method of making graded junction containing amorphous semiconductor." This invention introduces a new semiconductor device that features a graded p-i-n junction instead of the traditional step type. The device demonstrates high photoelectric conversion efficiency and can be produced easily with good reproducibility through a plasma discharge method. This makes it particularly suitable for use as a solar battery. Additionally, the patent includes an apparatus for the production of this semiconductor device.

Career Highlights

Toshihiro Yoshida is associated with Toa Nenryo Kogyo, K.K., where he has made significant strides in semiconductor research and development. His work has not only contributed to the company's reputation but has also advanced the field of renewable energy technologies.

Collaborations

Yoshida has collaborated with notable colleagues, including Mitsuo Matsumura and Hideo Yamamoto. Their combined expertise has fostered innovation and development in semiconductor applications.

Conclusion

Toshihiro Yoshida's contributions to semiconductor technology, particularly in the realm of solar energy, highlight his role as a key innovator in the industry. His patented methods and collaborative efforts continue to influence advancements in renewable energy solutions.

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