Company Filing History:
Years Active: 1988
Title: Kunio Asai: Innovator in Semiconductor Technology
Introduction
Kunio Asai is a notable inventor based in Ohi, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of devices that enhance photoelectric conversion efficiency. His innovative approach has paved the way for advancements in solar energy applications.
Latest Patents
Asai holds a patent for a "Method of making graded junction containing amorphous semiconductor." This invention introduces a new semiconductor device that features a graded p-i-n junction instead of the traditional step type. The device demonstrates high photoelectric conversion efficiency and can be produced easily with good reproducibility through a plasma discharge method. This makes it especially suitable for use as a solar battery. Additionally, the patent includes an apparatus for the production of this semiconductor device.
Career Highlights
Kunio Asai is associated with Toa Nenryo Kogyo, K.K., where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to the company's reputation but has also had a lasting impact on the industry.
Collaborations
Asai has collaborated with notable colleagues, including Mitsuo Matsumura and Hideo Yamamoto. Their combined expertise has fostered innovation and development in semiconductor research.
Conclusion
Kunio Asai's contributions to semiconductor technology, particularly in the realm of solar energy, highlight his role as a key innovator in the field. His patented methods and collaborative efforts continue to influence advancements in this critical area of technology.