The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Aug. 19, 2022
Intel Corporation, Santa Clara, CA (US);
Adel Elsherbini, Chandler, AZ (US);
Shawna Liff, Scottsdale, AZ (US);
Kimin Jun, Portland, OR (US);
Veronica Strong, Hillsboro, OR (US);
Aleksandar Aleksov, Chandler, AZ (US);
Jiraporn Seangatith, Chandler, AZ (US);
Mohammad Enamul Kabir, Portland, OR (US);
Johanna Swan, Scottsdale, AZ (US);
Tushar Talukdar, Wilsonville, OR (US);
Omkar Karhade, Chandler, AZ (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Composite integrated circuit (IC) device processing, including selective removal of inorganic dielectric material. Inorganic dielectric material may be deposited, modified with laser exposure, and selectively removed. Laser exposure parameters may be adjusted using surface topography measurements. Inorganic dielectric material removal may reduce surface topography. Vias and trenches of varying size, shape, and depth may be concurrently formed without an etch-stop layer. A composite IC device may include an IC die, a conductive via, and a conductive line adjacent a compositionally homogenous inorganic dielectric material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile