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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12777657 B1

PDFFull Text
Date of Patent:
Oct. 27, 2026

Filed:

Sep. 30, 2022

High endurance super-lattice anti-ferroelectric capacitors

Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Sou-Chi Chang, Portland, OR (US);

Nazila Haratipour, Portland, OR (US);

Christopher Neumann, Portland, OR (US);

Shriram Shivaraman, Hillsboro, OR (US);

Brian Doyle, Portland, OR (US);

Sarah Atanasov, Beaverton, OR (US);

Bernal Granados Alpizar, Beaverton, OR (US);

Uygar Avci, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:

Essential Patents Group, LLP

Primary Examiner:

Ermias T Woldegeorgis

Int. Cl.
CPC ...
H01L 27/11507 (2017.01); H10B 51/00 (2023.01); H10B 51/20 (2023.01); H10B 51/30 (2023.01); H10B 53/20 (2023.01); H10B 53/30 (2023.01); H01G 4/06 (2006.01); H01G 4/10 (2006.01); H01G 4/12 (2006.01); H01G 4/33 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02); H10B 51/00 (2023.02); H10B 51/20 (2023.02); H10B 51/30 (2023.02); H10B 53/20 (2023.02); H01G 4/06 (2013.01); H01G 4/10 (2013.01); H01G 4/12 (2013.01); H01G 4/33 (2013.01); H10B 12/00 (2023.02); H10B 12/02 (2023.02); H10B 12/30 (2023.02);
Abstract

Apparatuses, memory systems, capacitor structures, and techniques related to anti-ferroelectric capacitors having a cerium oxide doped hafnium zirconium oxide based anti-ferroelectric are described. A capacitor includes layers of hafnium oxide, cerium oxide, and zirconium oxide between metal electrodes. The cerium of the cerium oxide provides a mid gap state to protect the hafnium zirconium oxide during operation.

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Chang, Sou-Chi. (2026). High endurance super-lattice anti-ferroelectric capacitors (U.S. Patent No. 12777657). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777657

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