The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Oct. 26, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Woo Hyun Lee, Daejeon, KR;

Su Ji Gim, Hwaseong-si, KR;

Dong Jun Ka, Suwon-si, KR;

Kyung Nam Kang, Hwaseong-si, KR;

Hong Sik Park, Suwon-si, KR;

Deok Cheon Son, Hwaseong-si, KR;

Jeong Yeon Song, Hwaseong-si, KR;

Sun Hee Choy, Jeonju-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/505 (2006.01); H10P 14/40 (2026.01);
U.S. Cl.
CPC ...
H01J 37/32816 (2013.01); C23C 16/4405 (2013.01); C23C 16/45536 (2013.01); C23C 16/45565 (2013.01); C23C 16/505 (2013.01); H01J 37/32357 (2013.01); H01J 37/3244 (2013.01); H01J 37/32743 (2013.01); H10P 14/418 (2026.01); H01J 37/32082 (2013.01); H01J 37/32862 (2013.01); H01J 2237/182 (2013.01); H01J 2237/3321 (2013.01);
Abstract

A semiconductor device manufacturing method comprising loading a substrate into a substrate treatment apparatus, performing a deposition process on the substrate, and cleaning the substrate treatment apparatus. The substrate treatment apparatus includes a housing defining a treatment area in which the deposition process is performed, a gas supply supplying a first process gas at a flow rate of 1000 sccm to 15000 sccm and supplying a second process gas, a remote plasma supply connected to the gas supply, generating a first process plasma and a second process plasma by applying RF power to plasma-process the first process gas and the second process gas, and a shower head installed in the housing to supply the first process plasma and the second process plasma to the treatment area. The second process plasma cleans a membrane material deposited on an inner wall of the housing.


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