Suwon, South Korea

Dong Jun Ka

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dong Jun Ka. Retrieved from https://idiyas.com/inventor/dong-jun-ka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Dong Jun Ka: Semiconductor Manufacturing Inventor

Introduction

Dong Jun Ka is an inventor based in Suwon, South Korea. His work includes an invention for substrate treatment and semiconductor device manufacturing, and he is associated with Samsung Electronics Ltd. The provided information lists 1 patent.

Latest Patents

His listed patent, “Substrate Treatment Apparatus and Semiconductor Device Manufacturing Method Using the Same,” describes a method that loads a substrate into a treatment apparatus, deposits material on it, and cleans the apparatus.

The apparatus includes a housing with a treatment area, a gas supply for two process gases, a remote plasma supply that generates plasma using RF power, and a shower head that delivers the plasma to the treatment area. The second process plasma is used to clean membrane material deposited on the housing’s inner wall. The first process gas is supplied at a flow rate of 1,000 to 15,000 sccm.

Career Highlights

The available information connects Dong Jun Ka with Samsung Electronics Ltd. and identifies his patent as addressing substrate processing and cleaning in semiconductor manufacturing.

Collaborations

The provided data names Woo Hyun Lee and Su Ji Gim as coworkers. It does not specify their roles in the patent or describe the nature of their collaboration.

Conclusion

Dong Jun Ka’s listed invention focuses on integrating deposition and plasma-based cleaning into semiconductor substrate treatment, with the aim of supporting device manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…