The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Mar. 16, 2022
Applicant:

Nippon Micrometal Corporation, Saitama, JP;

Inventors:

Daizo Oda, Saitama, JP;

Motoki Eto, Saitama, JP;

Takashi Yamada, Saitama, JP;

Teruo Haibara, Saitama, JP;

Ryo Oishi, Saitama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 72/50 (2026.01); H10W 72/00 (2026.01); G01N 23/203 (2006.01); G01N 23/2276 (2018.01); H10W 95/00 (2026.01);
U.S. Cl.
CPC ...
H10W 72/50 (2026.01); H10W 72/015 (2026.01); H10W 72/075 (2026.01); G01N 23/203 (2013.01); G01N 23/2276 (2013.01); G01N 2223/102 (2013.01); G01N 2223/601 (2013.01); G01N 2223/602 (2013.01); G01N 2223/61 (2013.01); G01N 2223/611 (2013.01); G01N 2223/633 (2013.01); H10W 72/01515 (2026.01); H10W 72/01551 (2026.01); H10W 72/01565 (2026.01); H10W 72/07511 (2026.01); H10W 72/07532 (2026.01); H10W 72/07533 (2026.01); H10W 72/522 (2026.01); H10W 72/523 (2026.01); H10W 72/535 (2026.01); H10W 72/552 (2026.01); H10W 72/5522 (2026.01); H10W 72/5525 (2026.01); H10W 72/555 (2026.01); H10W 95/00 (2026.01);
Abstract

To provide a novel Cu bonding wire that achieves a favorable FAB shape and a favorable bondability of the 2nd bonded part, and further achieves favorable bond reliability even in a rigorous high-temperature environment. The bonding wire for semiconductor devices includes: a core material of Cu or Cu alloy; and a coating layer containing conductive metal other than Cu formed on a surface of the core material, wherein the coating layer has a region containing Ni as a main component on a core material side, and has a region containing Au and Ni on a wire surface side, in a thickness direction of the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, a ratio C/Cof a concentration C(mass %) of Au to a concentration C(mass %) of Ni relative to the entire wire is 0.02 or more and 0.7 or less, a concentration of Au at the surface of the wire is 10 atomic % or more and 90 atomic % or less, and at least one of the following conditions (i) and (ii) is satisfied:


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