The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Jan. 23, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Wei-Yu Chen, Hsinchu, TW;
Chung-Hui Chen, Hsinchu, TW;
Hao-Cheng Hou, Hsinchu, TW;
Jung Wei Cheng, Hsinchu, TW;
Tsung-Ding Wang, Tainan, TW;
Chien-Hsun Lee, Chu-tung, TW;
Shang-Yun Hou, Jubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method of forming an inductor including forming a first redistribution structure on a substrate, forming a first conductive via over and electrically connected to the first redistribution structure, depositing a first magnetic material over a top surface and sidewalls of the first conductive via, coupling a first die and a second die to the first redistribution structure, encapsulating the first die, the second die, and the first conductive via in an encapsulant, and planarizing the encapsulant and the first magnetic material to expose the top surface of the first conductive via while a remaining portion of the first magnetic material remains on sidewalls of the first conductive via, where the first conductive via and the remaining portion of the first magnetic material provide an inductor.