The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
May. 05, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chang-Ta Chen, Taipei, TW;
Ming-Chang Wen, Kaohsiung, TW;
Kuo-Feng Yu, Hsinchu, TW;
Chen-Yu Tai, Miaoli, TW;
Yun Lee, Taipei, TW;
Poya Chuang, Hsinchu, TW;
Chun-Ming Yang, Taipei, TW;
Yoh-Rong Liu, Taipei, TW;
Ya-Ting Yang, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Provided is a device with a replacement spacer structure and a method for forming such a structure. The method includes forming an initial spacer structure, wherein the initial spacer structure has an initial etch rate for a selected etchant. The method further includes removing a portion of the initial spacer structure, wherein a remaining portion of the initial spacer structure is not removed. Also, the method includes forming a replacement spacer structure adjacent to the remaining portion of the initial spacer structure to form a combined spacer structure, wherein the combined spacer structure has an intermediate etch rate for the selected etchant that is less than the initial etch rate for a selected etchant. Further, the method includes etching the combined spacer structure with the selected etchant to form a final spacer structure.