Ya-Ting Yang

Title: Ya-Ting Yang and Semiconductor Spacer Innovation.

Introduction

Ya-Ting Yang is an inventor associated with Tainan, Taiwan, and Taiwan Semiconductor Manufacturing Company Limited. Her patent work addresses replacement sidewall spacers, a component used in semiconductor device fabrication. The available information lists 1 patent for Yang.

Latest Patents

Yang’s patent, “Replacement Sidewall Spacers,” describes a device structure and a method for forming it. The process begins by creating an initial spacer structure with a particular etch rate for a selected etchant. A portion of that structure is removed while some of it remains, and a replacement spacer is formed beside the remaining portion. Together, the original and replacement materials create a combined spacer structure with a lower etch rate than the initial structure. The combined structure is then etched to produce the final spacer.

Career Highlights

Yang’s listed invention focuses on controlling spacer etching through the combination of materials with different etch rates. This approach is relevant to semiconductor manufacturing, where precise formation of device structures is important. Her work is associated with Taiwan Semiconductor Manufacturing Company Limited.

Collaborations

Chang-Ta Chen and Ming-Chang Wen are identified as Yang’s coworkers. The provided information does not specify their roles in the patent or describe particular collaborative contributions.

Conclusion

Ya-Ting Yang’s patent presents a method for forming replacement sidewall spacers by combining materials to control etching, reflecting her contribution to semiconductor fabrication technology.