The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Dec. 24, 2022
Intel Corporation, Santa Clara, CA (US);
Han Wui Then, Portland, OR (US);
Marko Radosavljevic, Portland, OR (US);
Heli Chetanbhai Vora, Hillsboro, OR (US);
Samuel James Bader, Hillsboro, OR (US);
Ahmad Zubair, Hillsboro, OR (US);
Thomas Hoff, Hillsboro, OR (US);
Pratik Koirala, Portland, OR (US);
Michael S. Beumer, Portland, OR (US);
Paul Nordeen, Hillsboro, OR (US);
Nityan Nair, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Gallium nitride (GaN) devices with through-silicon vias for integrated circuit technology are described. In an example, an integrated circuit structure includes a layer including gallium and nitrogen, the layer including gallium and nitrogen above a silicon substrate. A backside structure is below the silicon substrate and opposite the layer including gallium and nitrogen, the backside structure including conductive features and dielectric structures. The integrated circuit structure also includes a plurality of through-silicon via power bars having a staggered arrangement, individual ones of the through-silicon via power bars extending through the layer including gallium and nitrogen and through the silicon substrate to a corresponding one of the conductive features of the backside structure, and individual ones of the through-silicon via power bars having a tapered portion coupled to an essentially vertical portion.