The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2026

Filed:

Jun. 30, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shih-Kang Fu, Hsinchu, TW;

Hsien-Chang Wu, Hsinchu, TW;

Ming-Han Lee, Hsinchu, TW;

Shau-Lin Shue, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 20/00 (2026.01); H10W 20/41 (2026.01); H10W 20/42 (2026.01); H10W 20/44 (2026.01);
U.S. Cl.
CPC ...
H10W 20/033 (2026.01); H10W 20/056 (2026.01); H10W 20/062 (2026.01); H10W 20/077 (2026.01); H10W 20/081 (2026.01); H10W 20/42 (2026.01); H10W 20/425 (2026.01); H10W 20/438 (2026.01); H10W 20/4435 (2026.01);
Abstract

A semiconductor device includes a substrate, an interconnect layer disposed over the substrate, a metal line formed in the interconnect layer, a dielectric layer disposed on the interconnect layer, and a via contact formed in the dielectric layer and electrically connected to the metal line. One of the via contact and the metal line includes a first metal material and a barrier metal layer disposed on the first metal material. The first metal material includes an alloy which is a mixture of two metal elements. The barrier metal layer includes one of the two metal elements.


Find Patent Forward Citations

Loading…