The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Jun. 21, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Sih-Hao Liao, New Taipei City, TW;
Yu-Hsiang Hu, Hsinchu, TW;
Hung-Jui Kuo, Hsinchu, TW;
Chen-Hua Yu, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 20/42 (2026.01); C08G 73/10 (2006.01); C09D 179/08 (2006.01); H10W 70/05 (2026.01); H10W 74/01 (2026.01); H10W 74/15 (2026.01); H10W 70/60 (2026.01); H10W 72/00 (2026.01); H10W 72/20 (2026.01); H10W 72/90 (2026.01); H10W 74/00 (2026.01);
U.S. Cl.
CPC ...
H10W 70/05 (2026.01); C08G 73/1025 (2013.01); C09D 179/08 (2013.01); H10W 74/012 (2026.01); H10W 74/15 (2026.01); C08G 2190/00 (2013.01); H10W 70/60 (2026.01); H10W 70/614 (2026.01); H10W 72/241 (2026.01); H10W 72/874 (2026.01); H10W 72/884 (2026.01); H10W 72/9413 (2026.01); H10W 74/00 (2026.01);
Abstract
A method of manufacturing a semiconductor device includes placing a polymer raw material mixture over a substrate. The polymer raw material may include a polymer precursor, a photosensitizer, and an additive. The polymer raw material mixture is exposed to radiation to form a dielectric layer and cured at a temperature of between about 150° C. and about 230° C.