Bit line voltage clamping read circuit for an in- memory compute operation where simultaneous access is made to plural rows of a static random access memory (sram)

Abstract

An in-memory computation circuit includes a memory array with SRAM cells connected in rows by word lines and in columns by bit lines. A row controller circuit simultaneously actuates word lines in parallel for an in-memory compute operation. A column processing circuit includes a clamping circuit that clamps a voltage on the bit line to a level exceeding an SRAM cell bit flip voltage during execution of the in-memory compute operation. The column processing circuit may further include a current mirroring circuit that mirrors the read current developed on each bit line in response to the simultaneous actuation to generate a decision output for the in-memory compute operation. The mirrored read current is integrated by an integration capacitor to generate an output voltage that is converted to a digital signal by an analog-to-digital converter circuit.