The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Aug. 02, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hsin-Chang Lee, Hsinchu County, TW;
Ping-Hsun Lin, New Taipei City, TW;
Pei-Cheng Hsu, Taipei City, TW;
Hsuan-I Wang, New Taipei City, TW;
Hung-Yi Tsai, Hsinchu County, TW;
Bo-Wei Shih, Changhua County, TW;
Ta-Cheng Lien, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes forming a reflective multilayer over a substrate; depositing a first capping layer over the reflective multilayer, wherein the first capping layer is made of a ruthenium-containing material or a chromium-containing material; performing a treatment to the first capping layer to introduce nitrogen or fluorine into the first capping layer; forming an absorption layer over the first capping layer; and patterning the absorption layer.