The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Jun. 06, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Yu-Ting Hsiao, Taichung City, TW;
Min-Hsiu Hung, Tainan City, TW;
Wei-Jung Lin, Hsinchu City, TW;
Chih-Wei Chang, Hsin-Chu, TW;
Ming-Hsing Tsai, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Mnaufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H10D 64/62 (2025.01);
U.S. Cl.
CPC ...
H01L 21/28518 (2013.01); H10D 64/62 (2025.01);
Abstract
A method of forming a semiconductor device includes the following steps. A first layer is provided, wherein a material of the first layer is amorphous or single crystal. A first conductive layer is directly deposited on the first layer, wherein the first conductive layer is in direct contact with the first layer, and a cross-sectional area of a grain of a material of the first conductive layer is larger than 500 nm.